2n3005 transistor datasheet booklet

Regarding the change of names mentioned in the document, such as hitachi electric and hitachi xx, to renesas. It is intended for power switching circuits,series and shunt regulators, output stages and high fidelityamplifiers. Ltd1qwr205003,asilicon npn transistorsthe utc 2n3055 is a silicon npn transistor in to3metal case. The basic application range include power switching, high fidelity amplification, shunt regulation, and forming the output stages of various power circuits. Complementary silicon power transistors aredesigned for. C utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values such as maximum ratings, operating condition ranges, or. These powerbase complementary transistors are designed for high. C3209 datasheet pdf npn transistor nec, 2sc3209 datasheet, c3209 pdf, c3209 pinout, c3209 equivalent, c3209 transistor, c3209 schematic, c3209 manual. Free devices maximum ratings rating symbol value unit collector. Aod454 nchannel enhancement mode field effect transistor. Pinning pin description 1 emitter 2 base 3 collector, connected to case fig. Modern 2n3055 datasheets often, but not always, specify ft of 2. The 2sc3355 is an npn silicon epitaxial transistor designed for low noise amplifier at vhf, uhf and catv band. It also has decent switching characteristics transition frequency is 100mhz hence can amplify lowlevel signals.

Emitter voltage 2n6515 2n6517, 2n6520 vceo 250 350 vdc collector. Base voltage 2n6515 2n6517, 2n6520 vcbo 250 350 vdc. Although the software seems a bit ugly design running on dos, but it works perfectly with the database with many components and is free, makes an interesting tool to interested in electronics, want to know when information about a particular component or find a replacement the operation is quite simple and is separated by categories such as. The 2n3055 is a npn epitaxialbase planar transistor that normally comes encapsulated in a metal jedec to3 package. Texas instruments, semiconductor and components data book 19678, scan, pdf. Disclaimer this data sheet and its contents the information belong to the. In this post we comprehensively discuss the pinout function, electrical specification, and application designs for the power transistor 2n3055. The 2n5551 is an npn amplifier transistor with an amplification factor hfe of 80 when the collector current is 10ma. No licence is granted for the use of it other than for information purposes in connection with the products to.

Due to this feature, the transistor is commonly used for amplification of audio or other low power signals. Description the device is a silicon npn overlay transistor in a to39 metal package with the collector connected to the case. Data sheets and specificationsjedec publication no. Of course you need the datasheet of the transistor to design a circuit using it. Transfer characteristics i d a 20 25 30 35 40 45 50 0 4 8 12 16 20. The query regarding how to install 2n3005 would include either mechanical or electronic. Microsemi corporation, a wholly owned subsidiary of microchip technology inc. Regarding the change of names mentioned in the document, such as hitachi electric and hitachi xx, to renesas technology corp. It is intended for power switching circuits, series and shunt regulators, output stages and high fidelity amplifiers. Applications considered on reliability a the type and specifications of our transistors and semiconductor devices vary depending on the application that will be required by their intended use.

Diodes and transistors pdf 28p this note covers the following topics. Bc212l pnp general purpose amplifier this device is designed for general pur pose a mpli fier a pp lications at co llector currents to 300ma. High power npn silicon transistor stmicroelectronics preferred salestypes description the 2n3771, 2n3772 are silicon epitaxialbase npn transistors mounted in jedec jedec to3 metal case. The 2n3055 is a silicon npn power transistor intended for general purpose applications. Fairchildonsemiconductor get it fast same day shipping. Hiperfettm power mosfets nchannel enhancement mode avalanche rated, high dvdt, low trr 2sk1859. Epitaxial planar npn description the 2n1711 is a silicon planar epitaxial npn transistor in jedec to39 metal case. Please consult the most recently issued document before initiating or completing a design. The 1967 rca transistor manual, sc, did not mention any measure of. The datasheet states the maximum allowed output current and your design should limit its. Pc25wtc25 applications with general purpose applications pinning pin description 1base 2 collector 3 emitter. Download ic database equivalent guide 100 thousand.

With a collector current of 10ma and a base current of 1ma then its typical as shown on the graph collector saturation voltage is less than 0. This data sheet and its contents the information belong to the members of the premier farnell group of companies the group or are licensed to it. The 2n3055 is a power bipolar transistor designed to handle high power loads in the range of 100 v, and 15 amps. It is intented for use in high performance amplifier, oscillator and switching circuits. Bc287 silicon pnp transistor by motorola,download sgs bc287 datasheet. Td2401 date published july 1995 p printed in japan 2sc5010 description the 2sc5010 is an npn epitaxial silicon transistor designed for use in low noise and small signal amplifiers from vhf band to l band. Like any other transistor 2n3055 has three pins namely emitter, base and collector. The datasheet is printed for reference information only. Pinning to393 pin description 1 emitter 2 base 3 collector fig. Look at the datasheet of any transistor like the 2n3904 for example. Basic semiconductor physics, diodes, the nonlinear diode model, load line analysis, large signal diode models, offset diode model, transistors, large signal bjt model, load line analysis, small signal model and transistor amplification. The transistor and diode data book for design engineers. Application hints regarding how to install transistor 2n3055 and paralleling 2n3055 have also. It has lange dynamic range and good current characteristic.

Typical parameters which may be provided in scillc data sheets andor. Plastic package has underwriters laboratory flammability classifications 94v0 metal to silicon rectifier, majority carrier conduction low power loss, high efficiency high current capability, low forward voltage drop high surge capability for use in low voltage, high frequency inverters, free wheeling, and polarity protection applications guardring. Bc287 silicon pnp audio amplifier transistor in a to39 can by motorola. Silicon npn power transistors 2sd2058 description with to220f package complement to type 2sb66 low collector saturation voltage. I get datasheets from your circuit design determines the output current. High gainbandwidth product charac teristic provides excellent performance in a variety of small signal. Recent listings manufacturer directory get instant. Texas instruments transistor diode data book text pn junction. The device is designed for general purpose switching and amplifier applications. The 2n1711 is also used to advantage in amplifiers where low noise is an important factor. They are intended for linear amplifiers and inductive switching applications.